? 2014 ixys corporation, all rights reserved IXYH50N65C3H1 v ces = 650v i c110 = 50a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.10v t fi(typ) = 27ns ds100572b(7/14) g = gate c = collector e = emitter tab = collector to-247ad g c e tab extreme light punch through igbt for 20-60khz switching features ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? international standard package advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 50 ? a t j = 150 ? c 3 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 36a, v ge = 15v, note 1 1.74 2.10 v t j = 150 ? c 2.00 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 130 a i c110 t c = 110c 50 a i f110 t c = 110c 40 a i cm t c = 25c, 1ms 250 a i a t c = 25c 20 a e as t c = 25c 300 mj ssoa v ge = 15v, t vj = 150c, r g = 5 ? i cm = 100 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 600 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g xpt tm 650v igbt genx3 tm w/ sonic diode preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N65C3H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 36a, v ce = 10v, note 1 19 28 s c ie s 2346 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 230 pf c res 50 pf q g(on) 80 nc q ge i c = 36a, v ge = 15v, v ce = 0.5 ? v ces 15 nc q gc 40 nc t d(on) 22 ns t ri 35 ns e on 1.30 mj t d(off) 80 ns t fi 27 ns e of f 0.37 mj t d(on) 23 ns t ri 33 ns e on 1.70 mj t d(off) 100 ns t fi 42 ns e off 0.56 mj r thjc 0.25 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 36a, v ge = 15v v ce = 400v, r g = 5 ? note 2 inductive load, t j = 150c i c = 36a, v ge = 15v v ce = 400v, r g = 5 ? note 2 1 - gate 2,4 - collector 3 - emitter to-247 (ixyh) outline reverse sonic diode (frd) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.5 v t j = 150c 2.15 v i rm t j = 150c 25 a t rr t j = 150c 120 ns r thjc 0.60 c/w i f = 30a, v ge = 0v, -di f /dt = 500a/ s, v r = 300v prelimanary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2014 ixys corporation, all rights reserved IXYH50N65C3H1 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 0.5 1 1.5 2 2.5 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 7v 9v 8v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 8v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 35 40 45 50 55 00.511.5 22.533.5 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 9v 7v 6v 8v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 36a i c = 18a i c = 54a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 54a t j = 25oc 36a 18a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 4567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N65C3H1 fig. 11. forward-bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 10ms v ce(sat) limi t 100s fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 12. maximum transient thermal impedance aasss 0.4 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 102030405060708090100110 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 1020304050607080 q g - nanocoulombs v ge - volts v ce = 325v i c = 36a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res
? 2014 ixys corporation, all rights reserved IXYH50N65C3H1 fig. 13. inductive switching energy loss vs. gate resistance 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 5 1015202530354045 r g - ohms e off - millijoules 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 36a i c = 54a fig. 16. inductive turn-off switching times vs. gate resistance 20 30 40 50 60 70 80 5 1015202530354045 r g - ohms t f i - nanoseconds 0 80 160 240 320 400 480 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 36a i c = 54a fig. 14. inductive switching energy loss vs. collector current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 18 22 26 30 34 38 42 46 50 54 i c - amperes e off - millijoules 0.0 0.6 1.2 1.8 2.4 3.0 3.6 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 36a i c = 54a fig. 17. inductive turn-off switching times vs. collector current 0 10 20 30 40 50 60 70 80 90 18 22 26 30 34 38 42 46 50 54 i c - amperes t f i - nanosecond s 50 60 70 80 90 100 110 120 130 140 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 18. inductive turn-off switching times vs. junction temperature 10 20 30 40 50 60 70 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 60 70 80 90 100 110 120 t d(off) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 54a i c = 36a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N65C3H1 fig. 20. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 70 18 22 26 30 34 38 42 46 50 54 i c - amperes t r i - nanosecond s 16 18 20 22 24 26 28 30 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 21. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 19 20 21 22 23 24 25 26 27 t d(on) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 400v i c = 54a i c = 36a fig. 19. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 5 1015202530354045 r g - ohms t r i - nanosecond s 0 20 40 60 80 100 120 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 54a i c = 36a fig. 22. maximum peak load current vs. frequency 10 20 30 40 50 60 70 80 90 100 10 100 1,000 f max - kilohertz i c - amperes t j = 150oc t c = 75oc v ce = 400v v ge = 15v r g = 5 ? duty cycle = 50% square wave triangular wave
? 2014 ixys corporation, all rights reserved IXYH50N65C3H1 fig. 27. recovery energy e rec vs. -di f /d t 100 150 200 250 300 350 400 450 500 400 600 800 1000 1200 1400 1600 1800 2000 -di f / d t - a/s e rec - microjoules i f =50a 30a 10a t vj = 150oc v r = 300v fig. 28. dynamic parameters q rr , i rm vs. virtual junction temperature t vj 0.20 0.40 0.60 0.80 1.00 1.20 0 20 40 60 80 100 120 140 160 t vj - degrees centigrade k f k f i rm k f q rr v r = 300v i f = 50a -di f /dt = 900a/s fig. 24. reverse recovery charge q rr vs. -di f /dt 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 400 600 800 1000 1200 1400 1600 1800 2000 -di f /d t - a/s q rr - microcoulombs 10a i f = 50a 30a t vj = 150oc v r = 300v fig. 25. peak reverse current i rm vs. -di f /d t 10 20 30 40 50 60 70 400 600 800 1000 1200 1400 1600 1800 2000 -di f /d t - a/s i rr - amperes i f = 50a t vj = 150oc v r = 300v 30a 10a fig. 26. recover time t rr vs. -di f /d t 20 40 60 80 100 120 140 400 600 800 1000 1200 1400 1600 1800 2000 -di f /dt - a/s t rr - nanasecond s i f = 50a t vj = 150oc v r = 300v 30a 10a fig. 23. forward current vs. forward voltage 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 4 v f - volts i f - amperes 150oc t vj = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N65C3H1 ixys ref: ixy_50n65c3(5d)8-09-13/dmhp19-067f_4-03-14 fig. 29. maximum transient thermal impedance (diode) 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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